参数资料
型号: 2SK3298-AZ
元件分类: JFETs
英文描述: 7.5 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: MP-45F, ISOLATED TO-220, 3 PIN
文件页数: 1/8页
文件大小: 69K
代理商: 2SK3298-AZ
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confirm that this is the latest version.
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availability and additional information.
1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3298
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
D14059EJ1V0DS00 (1st edition)
Date Published
April 2000 NS CP(K)
Printed in Japan
DATA SHEET
The mark 5
5
5 shows major revised points.
DESCRIPTION
The 2SK3298 is N-channel MOS FET device that features a
low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge
QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.5 A)
Gate voltage rating ±30 V
Low on-state resistance
RDS(on) = 0.75
MAX. (VGS = 10 V, ID = 4.0 A)
Avalanche capability ratings
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
600
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±7.5
A
Drain Current (Pulse)
Note1
ID(pulse)
±30
A
Total Power Dissipation (TA = 25°C)
PT1
2.0
W
Total Power Dissipation (TC = 25°C)
PT2
40
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
7.5
A
Single Avalanche Energy
Note2
EAS
37.5
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25
, VGS = 20 V → 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3298
Isolated TO-220
相关PDF资料
PDF描述
2SK3298 7.5 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3298 7.5 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3299-ZJ 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3299-AZ 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3301(2-7J1B) 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET
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