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参数资料
| 型号： | 2SK3298 |
| 元件分类： | JFETs |
| 英文描述： | 7.5 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 69K |
| 代理商： | 2SK3298 |
Data Sheet D14059EJ1V0DS00
5
2SK3298
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Tch - Channel Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
040
20
60
100
140
80
120
160
100
80
60
40
20
0
TC - Case Temperature - C
P
T
-
Total
Power
Dissipation
-
W
0
80
20
40
60
100
140
120
160
40
30
20
10
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
FORWARD BIAS SAFE OPERATING AREA
10
100
1000
ID
-
Drain
Current
-
A
1
VDS - Drain to Source Voltage - V
100
10
1
0.1
Po
wer
Dissipation
Limited
100
s
10
ms
30
ms
1 ms
3 ms
100
ms
PW
=10
s
R
DS(on)
Limited
ID(pulse)
ID(DC)
TC = 25C
Single Pulse
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th
(t)
-
Transient
Thermal
Resistance
-
C/
W
100 m
1
10
100
1000
10 m
1 m
100
10
100
10
1
0.1
0.01
Rth(ch-A) = 62.5 C/W
Rth(ch-C) = 3.13 C/W
Single Pulse
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3298 | 7.5 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3299-ZJ | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3299-AZ | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3301(2-7J1B) | 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3301 | 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3298-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 750m@10V IsolatedTO220 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 750m@10V IsolatedTO220 Bulk |
| 2SK3299 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3299-S | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3299-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK33 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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