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参数资料
| 型号： | 2SK3299-AZ |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | MP-25, 3 PIN |
| 文件页数： | 7/10页 |
| 文件大小： | 206K |
| 代理商： | 2SK3299-AZ |
Data Sheet D14060EJ1V0DS00
4
2SK3299
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
150
R
DS
(on)
-Drain
to
Source
On-state
Resistance
-
2.0
0
100
50
Tch - Channel Temperature - C
3.0
1.0
VGS = 10 V
5.0 A
Pulsed
ID = 10 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
ISD
-
Diode
Forward
Current
-
A
1.5
1.0
0.5
0
100
10
1
0.1
0.01
Pulsed
0 V
VGS = 10 V
1000
100
10
1
0.1
10000
1000
100
10
1
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
VGS= 0 V
f=1 MHz
VDS - Drain to Source Voltage - V
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS
0.1
1
10
100
ID - Drain Current - A
td
(on)
,tr,
td
(off)
,tf
-
Switching
Time
-
ns
100
10
1
0.1
VDD = 150 V
VGS = 10 V
RG = 10
td(off)
td(on)
tf
tr
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1
10
100
trr
-
Reverse
Recovery
Time
-
s
0.1
ID - Drain Current - A
10
1
0.1
0.01
di/dt = 50 A/ s
VGS = 0 V
QG - Gate Charge - nC
V
DS
-Drain
to
Source
Voltage
-
V
0
020
10
30
40
800
600
400
200
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-Gate
to
Source
Voltage
-
V
16
14
12
10
8
6
4
2
0
ID = 10 A
VGS
VDD = 450 V
300 V
150 V
VDS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3299-S | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3299-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK33 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK330 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
| 2SK330_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
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