参数资料
型号: 2SK3301(2-7J1B)
元件分类: JFETs
英文描述: 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-7J1B, SC-64, 3 PIN
文件页数: 1/3页
文件大小: 148K
代理商: 2SK3301(2-7J1B)
2SK3301
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)
2SK3301
Switching Regulatorand DC-DC Converter Applications
Low drain-source ON resistance: RDS (ON) = 15 (typ.)
High forward transfer admittance: |Yfs| = 0.65 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 720 V)
Enhancement mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
V
Drain-gate voltage (RGS = 20 k)
VDGR
900
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
1
Drain current
Pulse
(Note 1)
IDP
2
A
Drain power dissipation (Tc
= 25°C)
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
140
mJ
Avalanche current
IAR
1
A
Repetitive avalanche energy
(Note 3)
EAR
2.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note1:
Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 257 mH, RG = 25 ,
IAR = 1 A
Note 3: Repetitive rating: pulse width limited by max junction
temperature
This transistor is an electrostatic-sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
相关PDF资料
PDF描述
2SK3301(2-7B2B) 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3304 7 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3305 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3305-ZJ 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3305-S 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
相关代理商/技术参数
参数描述
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