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参数资料
| 型号： | 2SK3301 |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, 2-7J1B, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 144K |
| 代理商： | 2SK3301 |
2SK3301
2011-04-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 720 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.4
3.4
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 0.5 A
15
20
Ω
Forward transfer admittance
Yfs
VDS = 20 V, ID = 0.5 A
0.3
0.65
S
Input capacitance
Ciss
165
pF
Reverse transfer capacitance
Crss
6
pF
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
21
pF
Rise time
tr
15
Turn-on time
ton
60
Fall time
tf
40
Switching time
Turn-off time
toff
Duty
≤ 1%, tw = 10 μs
110
ns
Total gate charge
(gate-source plus gate-drain)
Qg
6
nC
Gate-source charge
Qgs
3
nC
Gate-drain (“miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 1 A
3
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
1
A
Pulse drain reverse current
(Note 1)
IDRP
2
A
Forward voltage (diode)
VDSF
IDR = 1 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
1300
ns
Reverse recovery charge
Qrr
IDR = 1 A, VGS = 0 V
dIDR/dt = 100 A/μs
1.95
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
K3301
Lot No.
Note 4
Part No. (or abbreviation code)
0 V
10 V
VGS
R
L
=800
Ω
VDD ≈ 400 V
ID = 0.5 A
VOUT
50
Ω
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3301(Q) | 功能描述:MOSFET MOSFET N-Ch 900V 1A Rdson=20Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3301(SM) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 1A I(D) | TO-252 |
| 2SK3301(TE16L1,NQ) | 功能描述:MOSFET MOSFET N-Ch 900V 1A Rdson=20Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3301_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulatorand DC-DC Converter Applications |
| 2SK3301_10 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Regulatorand DC-DC Converter Applications |
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