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参数资料
| 型号： | 2SK3305 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, MP-25, 3 PIN |
| 文件页数： | 6/10页 |
| 文件大小： | 271K |
| 代理商： | 2SK3305 |
Data Sheet D14003EJ2V0DS
3
2SK3305
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
40
60
100
120
140
160
20
40
60
80
100
Tc - Case Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
0
20
80
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
40
60
80
100
120
140
160
Tc - Case Temperature - C
P
T
-
Total
Power
Dissipation
-
W
0
100
80
60
40
20
0
Figure3. FORWARD BIAS SAFE OPERATING AREA
100
10
0.1
10
100
1000
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
1
Power
Dissipation
Limited
10
ms
R
DS(on)
Limited
ID(DC)
ID(pulse)
100
s
Tc = 25C
Single pulse
PW
=
10
s
1ms
Figure4. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0
4
8
12
16
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
10
8
6
2
0
Pulsed
VGS = 20 V
4
10 V
8.0 V
VGS = 6.0 V
Figure5. DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
0
VGS - Gate to Source Voltage - V
Pulsed
1000
100
0.001
0.01
ID
-
Drain
Current
-
A
0.1
1
10
510
15
TA = –25C
25C
75C
125C
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3305-ZJ | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3305-S | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3307 | 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3313 | 12 A, 500 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3320 | 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3305-AZ | 制造商:Renesas Electronics 功能描述:Nch 500V 5A 1500m@10V TO220AB Bulk |
| 2SK3305-S | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3305-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3305-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) TO-263 T/R Cut Tape |
| 2SK3305-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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