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参数资料
| 型号： | 2SK3310 |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 2-10R1B, SC-67, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 207K |
| 代理商： | 2SK3310 |
2SK3310
2004-07-06
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
A
Gate -source breakdown voltage
V (BR) GSS
IG = ±10 A, VDS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 450 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
450
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
3.0
5.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
0.48
0.65
Forward transfer admittance
Yfs
VDS = 10 V, ID = 5 A
1.5
4.3
S
Input capacitance
Ciss
920
Reverse transfer capacitance
Crss
12
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
140
pF
Rise time
tr
25
Turn-on time
ton
35
Fall time
tf
10
Switching time
Turn-off time
toff
60
ns
Total gate charge
Qg
23
Gate-source charge
Qgs
9
Gate-drain charge
Qgd
VDD 360 V, VGS = 10 V, ID = 10 A
14
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
10
A
Pulse drain reverse current
(Note 1)
IDRP
40
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
280
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/s
2.7
C
Marking
Duty <= 1%, tw = 10 s
0 V
10 V
VGS
RL = 40
VDD 200 V
ID = 5 A
VOUT
10
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3310
Part No. (or abbreviation code)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3316 | 5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3324-A | 6 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3325-AZ | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3325-S | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3325-S | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3310(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3310_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3310_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Regulator Applications |
| 2SK3312 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications |
| 2SK3312(Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220FL |
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