参数资料
型号: 2SK3320
元件分类: 小信号晶体管
英文描述: 14 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET
封装: USV, 2-2L1B, 5 PIN
文件页数: 1/5页
文件大小: 305K
代理商: 2SK3320
2SK3320
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3320
For Low Noise Audio Amplifier Applications
Two devices in a ultra super mini (five pins) package
High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)
High breakdown voltage: VGDS = 50 V
Super low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k)
High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
50
V
Gate current
IG
10
mA
Drain power dissipation
PD
(Note 1)
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Pin Assignment (top view)
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2L1B
Weight: 6.2 mg (typ.)
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参数描述
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