参数资料
型号: 2SK3325-ZJ
元件分类: JFETs
英文描述: 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: MP-25ZJ, TO-263, 3 PIN
文件页数: 1/8页
文件大小: 77K
代理商: 2SK3325-ZJ
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
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availability and additional information.
1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3325
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D14264EJ1V0DS00 (1st edition)
Date Published
May 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3325 is N-Channel DMOS FET device that features
a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge:
QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
Gate voltage rating: ±30 V
Low on-state resistance
RDS(on) = 0.85
MAX. (VGS = 10 V, ID = 5.0 A)
Avalanche capability ratings
TO-220AB, TO-262, TO-263 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
500
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
±30
V
Drain Current (DC)
ID(DC)
±10
A
Drain Current (pulse)
Note1
ID(pulse)
±40
A
Total Power Dissipation (TC = 25°C)
PT
85
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
10
A
Single Avalanche Energy
Note2
EAS
10.7
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25
, VGS = 20 V 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3325
TO-220AB
2SK3325-S
TO-262
2SK3325-ZJ
TO-263
(TO-220AB)
(TO-262)
(TO-263)
相关PDF资料
PDF描述
2SK3326B-S17-AY 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3326 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3326-AZ 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3335(TP) 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK3335(TP-FA) 8000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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