参数资料
型号: 2SK3326
元件分类: JFETs
英文描述: 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: MP-45F, ISOLATED TO-220, 3 PIN
文件页数: 7/10页
文件大小: 198K
代理商: 2SK3326
Data Sheet D14204EJ1V0DS00
4
2SK3326
Figure6. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
rth
(t)
-
Transient
Thermal
Resistance
-
C/W
Tc = 25 C
Single Pulse
0.01
Rth(ch-C) = 3.2 C/W
Rth(ch-A) = 62.5 C/W
Figure7. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
1
0.1
110
Iy
fs
I-
Forward
Transfer
Admittance
-
S
ID - Drain Current - A
0.01
100
0.1
TA = –25 C
25 C
75 C
125 C
VDS = 10 V
Pulsed
Figure8. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
15
20
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
Pulsed
25
05
0.0
2.0
1.0
ID = 10 A
5.0 A
2.0 A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
3.0
2.0
0
Figure9. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.1
10
ID - Drain Current - A
1
Pulsed
1.0
100
V
GS(off)
-
Gate
to
Source
Cut-off
Voltage
-
V
1.0
0.0
–50
0
50
100
150
200
Tch - Channel Temperature - C
Figure10. GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.0
3.0
4.0
VDS = 10 V
ID = 1 mA
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