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参数资料
| 型号： | 2SK3340-01 |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOS-FET |
| 中文描述： | 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 85K |
| 代理商： | 2SK3340-01 |
1
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
I
D
I
D(puls]
V
GS
I
AR *2
E
AV *1
P
D
T
ch
T
stg
Rating
400
±23
±92
±30
Unit
V
A
A
V
A
mJ
W
°C
23
545
295
+150
-55 to +150
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
2SK3340-01
N-CHANNEL SILICON POWER MOS-FET
FUJI POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero gate voltage drain current I
DSS
DS
=400V
V
ch
=25°C
V
GS
=0V T
ch
=125°C
=±30V
DS
=0V
V
GS
I
D
=11.5A V
GS
=10V
I
D
=11.5A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=23A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
400
2.5
3.0
10
0.2
10
0.16
8.5
17
2650
500
230
22
105
225
120
137
36
48
23
1.15
450
8.6
V
V
μA
mA
nA
S
pF
nC
A
V
ns
μC
ns
Min. Typ. Max. Units
Thermal resistance
0.424
50.0
°C/W
°C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total gate charge
Gate-Source charge
Gete-Drain charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=1mA V
GS
=0V
I
D
=1mA V
DS
=V
GS
Vcc=200V
I
D
=23A
V
GS
=10V
L=1.89mH T
ch
=25°C
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
*1 L=1.89mH, Vcc=40V *2 Tch<
3.5
500
1.0
100
0.2
3975
750
345
35
160
340
180
210
55
75
1.73
Gate(G)
Source(S)
Drain(D)
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相关代理商/技术参数 |
参数描述 |
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| 2SK3341-01 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOS-FET |
| 2SK3341-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3342 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV) |
| 2SK3342(Q) | 制造商:Toshiba 功能描述:Bulk |
| 2SK3342(SMD) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 4.5A I(D) | TO-252AA |
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