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参数资料
| 型号： | 2SK3351TP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 2/3页 |
| 文件大小： | 23K |
| 代理商： | 2SK3351TP |
2SK3351
HD 010614-2/3
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
30
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
60
A
Allowable Power Dissipation
PD
1W
Tc=25
°C30
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.0
2.4
V
Forward Transfer Admittance
|yfs|
VDS=10V, ID=15A
14
20
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=15A, VGS=10V
11
15
m
RDS(on)2
ID=4A, VGS=4.5V
15
21
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
1450
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
420
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
210
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
14
ns
Rise Time
tr
See specified Test Circuit
355
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
110
ns
Fall Time
tf
See specified Test Circuit
120
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=30A
28
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=30A
4.6
nC
Gate-to-Drain “Miller”Charge
Qgd
VDS=10V, VGS=10V, ID=30A
5
nC
Diode Forward Voltage
VSD
IS=30A, VGS=0
0.92
1.2
V
Marking : K3351
Switching Time Test Circuit
PW=1
s
D.C.
≤0.5%
P.G
50
G
S
D
ID=15A
RL=1
VDD=15V
VOUT
2SK3351
VIN
10V
0V
VIN
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PDF描述 |
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| 2SK3352SMP-FD | 45 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3353-ZJ | 82 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3353-S | 82 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3353 | 82 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3353-Z-AZ | 82 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3351TP-FA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 30A I(D) | TO-252VAR |
| 2SK3352 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P- Channel Silicon MOS FET DC-DC Converter |
| 2SK3352_05 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK3352-DL-E | 制造商:SANYO 功能描述:Nch 30V 45A 0.015 rlo?ec Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH30V45ASOT404 制造商:Sanyo 功能描述:0 |
| 2SK3353 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
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