参数资料
型号: 2SK3354-S
元件分类: JFETs
英文描述: 83 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封装: MP-25 FIN CUT, 3 PIN
文件页数: 2/8页
文件大小: 88K
代理商: 2SK3354-S
Data Sheet D14131EJ4V0DS
2
2SK3354
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V10
A
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 42 A35
59
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 42 A6.3
8.0
m
RDS(on)2
VGS = 4 V, ID = 42 A8.0
12
m
Input Capacitance
Ciss
VDS = 10 V
6300
pF
Output Capacitance
Coss
VGS = 0 V
1000
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
490
pF
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 42 A
100
ns
Rise Time
tr
VGS = 10 V
1500
ns
Turn-off Delay Time
td(off)
RG = 10
300
ns
Fall Time
tf
440
ns
Total Gate Charge
QG
VDD = 48 V
106
nC
Gate to Source Charge
QGS
VGS = 10 V20
nC
Gate to Drain Charge
QGD
ID = 83 A30
nC
Body Diode Forward Voltage
VF(S-D)
IF = 83 A, VGS = 0 V1.0
V
Reverse Recovery Time
trr
IF = 83 A, VGS = 0 V55
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
100
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS
10%
0
ID
90%
td(on)
tr td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
相关PDF资料
PDF描述
2SK3354 83 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3354 83 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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相关代理商/技术参数
参数描述
2SK3354-Z 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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2SK3354-ZJ 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 83A I(D) | TO-263AB
2SK3355 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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