参数资料
型号: 2SK3355-ZJ
元件分类: JFETs
英文描述: 83 A, 60 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: MP-25ZJ, 3 PIN
文件页数: 7/8页
文件大小: 87K
代理商: 2SK3355-ZJ
Data Sheet D14132EJ5V0DS
7
2SK3355
PACKAGE DRAWINGS (Unit: mm)
1)
TO-220AB(MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
2)
TO-262(MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
4
3)
TO-263 (MP-25ZJ)
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
5.7±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
0.5R
TYP.
0.8R
TYP.
2.8±0.2
4) TO-220SMD(MP-25Z)
Note
10 TYP.
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
3.0±0.5
1.1±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
0.5R
TYP.
0.8R
TYP.
0.75±0.3
2.8±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
5
相关PDF资料
PDF描述
2SK3355-S 83 A, 60 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
2SK3355-AZ 83 A, 60 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3356 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3356-AZ 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3356-AZ 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
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2SK3358 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3358-S 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE