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参数资料
| 型号： | 2SK3365-Z |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | TO-252, MP-3Z, 3 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 98K |
| 代理商： | 2SK3365-Z |
Data Sheet D14255EJ4V0DS
4
2SK3365
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth(t)
-
Transient
Thermal
Resistance
-
C
/W
10
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1000
100
Single Pulse
μ
Rth(chC) = 3.48 C/W
Rth(chA) = 125 C/W
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID- Drain Current - A
|
y
fs
|
-
Forward
Transfer
Admittance
-
S
VDS = 10 V
Pulsed
0.1
1
10
100
10
100
0.1
Tch =
50C
25C
Tch = 75C
150C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
Ω
05
20
10
15
Pulsed
40
50
30
ID = 15 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
Ω
40
1
60
10
100
1000
Pulsed
0
10 V
20
VGS = 4.0 V
4.5 V
0.1
80
100
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
to
Source
Cut-off
Voltage
-
V
VDS = 10 V
ID = 1 mA
50
0
50
100
150
0
1
2
2.5
1.5
0.5
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3373 | 2 A, 500 V, 3.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3397 | 70 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK339 | 5 A, 100 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3416-TL | 10000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3438 | 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3365-Z(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3365-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 Cut Tape |
| 2SK3366 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK3366-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 20A 3-Pin(3+Tab) TO-251 |
| 2SK3366-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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