- 您现在的位置：买卖IC网 > PDF目录33498 > 2SK3366-Z 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB PDF资料下载
参数资料
| 型号： | 2SK3366-Z |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 封装： | TO-252, MP-3Z, 3 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 121K |
| 代理商： | 2SK3366-Z |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK3366
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
D14256EJ3V0DS00 (3rd edition)
Date Published
August 2004 NS CP(K)
Printed in Japan
The mark
★ shows major revised points.
1999
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3366
TO-251 (MP-3)
2SK3366-Z
TO-252 (MP-3Z)
DESCRIPTION
The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook
computers.
FEATURES
Low on-resistance
RDS(on)1 = 21 m
(MAX.) (VGS = 10 V, ID = 10 A)
RDS(on)2 = 33 m
(MAX.) (VGS = 4.5 V, ID = 10 A)
RDS(on)3 = 43 m
(MAX.) (VGS = 4.0 V, ID = 10 A)
Low Ciss : Ciss = 730 pF (TYP.)
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±20
A
Drain Current (Pulse)
Note
ID(pulse)
±80
A
Total Power Dissipation (TC = 25 °C)
PT
30
W
Total Power Dissipation (TA = 25 °C)
PT
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to + 150
°C
Note PW
≤ 10
s, Duty cycle ≤ 1 %
THERMAL RESISTANCE
Channel to case Thermal Resistance
Rth(ch-C)
4.17
°C/W
Channel to ambient Thermal Resistance
Rth(ch-A)
125
°C/W
★
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3366-Z-AZ | 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SK3366 | 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3366 | 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3367 | 36000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3370 | 60 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3366-Z-AZ | 制造商:Renesas Electronics 功能描述:Nch 30V 20A 21m@10V TO252 Bulk |
| 2SK3367 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3367-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 36A 3-Pin(3+Tab) TO-251 |
| 2SK3367-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3367-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 36A 3-Pin(2+Tab) TO-252 |
发布紧急采购，3分钟左右您将得到回复。