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参数资料
| 型号： | 2SK3366 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 封装： | TO-251, MP-3, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 121K |
| 代理商： | 2SK3366 |
Data Sheet D14256EJ3V0DS
3
2SK3366
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
0
20
40
60
80
100
120
140
160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature - C
P
T
-
Total
Power
Dissipation
-
W
0
20
40
60
80
100
120
140
160
35
30
25
20
15
10
5
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0.1
1.0
10
100
1.0
10
100
0.1
Power
Dissipation
Limited
ID(DC) =20 A
R
DS(on)
Limited
(at
V
GS
=10
V)
1 ms
10
ms
PW
=
100
s
ID(PULSE) = 80 A
TC = 25C
Single Pulse
1000
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
2
3
4
60
1
Pulsed
VGS =10 V
20
4.5 V
4.0 V
40
80
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
0.01
1
0.1
10
100
Pulsed
0
1
4
3
2
TA = 150C
75C
25C
50C
56
0.001
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3366 | 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3367 | 36000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3370 | 60 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3370 | 60 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3372G | 0.47 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3366-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 20A 3-Pin(3+Tab) TO-251 |
| 2SK3366-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3366-Z-AZ | 制造商:Renesas Electronics 功能描述:Nch 30V 20A 21m@10V TO252 Bulk |
| 2SK3367 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3367-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 36A 3-Pin(3+Tab) TO-251 |
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