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参数资料
| 型号： | 2SK3366 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 封装： | TO-251, MP-3, 3 PIN |
| 文件页数： | 6/7页 |
| 文件大小： | 95K |
| 代理商： | 2SK3366 |
Data Sheet D14256EJ4V0DS
6
2SK3366
PACKAGE DRAWINGS (Unit : mm)
1) TO-251 (MP-3)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2
13
6.5±0.2
5.0±0.2
4
1.5-
0.1
+0.2
5.5±0.2
7.0
MIN.
13.7
MIN.
2.3
0.75
0.5±0.1
2.3±0.2
1.6±0.2
1.1±0.2
0.5-0.1
+0.2
0.5-0.1
+0.2
<R>
2) TO-252 (MP-3Z)
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Note The depth of notch at the top of the fin is from 0
to 0.2 mm.
EQUIVALENT CIRCUIT
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3367 | 36000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3370 | 60 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3370 | 60 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3372G | 0.47 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3374 | 1 A, 450 V, 4.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3366-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 20A 3-Pin(3+Tab) TO-251 |
| 2SK3366-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3366-Z-AZ | 制造商:Renesas Electronics 功能描述:Nch 30V 20A 21m@10V TO252 Bulk |
| 2SK3367 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3367-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 36A 3-Pin(3+Tab) TO-251 |
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