参数资料
型号: 2SK3367
元件分类: 小信号晶体管
英文描述: 36000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
封装: TO-251, MP-3, 3 PIN
文件页数: 5/9页
文件大小: 230K
代理商: 2SK3367
Data Sheet D14257EJ4V0DS
3
2SK3367
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
0
20
40
60
80
100 120 140 160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature - C
P
T
-
Total
Power
Dissipation
-
W
0
20
40
60
80
100 120 140 160
70
60
50
40
30
20
10
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
1
0.1
10
100
1000
1
10
100
TC = 25C
Single Pulse
ID(pulse) = 144 A
RDS(on)
Limited
(at
V
GS
= 10
V
)
PW
= 100
μs
1 ms
0.1
Po
wer
Dissipation
Limited
10
ms
ID(DC) = 36 A
100
ms
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
2
1
0.5
1.5
Pulsed
VGS =10 V
4.5 V
4.0 V
40
80
120
160
200
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
0.01
1
0.1
10
1000
100
Pulsed
0
1
4
3
2
56
0.001
0.0001
VDS = 10 V
TA = 150C
125C
75C
25C
40C
相关PDF资料
PDF描述
2SK3370 60 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3370 60 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3372G 0.47 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK3374 1 A, 450 V, 4.6 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3376TK-B 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
相关代理商/技术参数
参数描述
2SK3367-AZ 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 36A 3-Pin(3+Tab) TO-251
2SK3367-Z 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3367-Z-AZ 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 36A 3-Pin(2+Tab) TO-252
2SK3367-Z-E1-AZ 制造商:Renesas Electronics 功能描述:Nch 30V 36A 9m@10V TO252 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 36A 3-Pin(2+Tab) TO-252 T/R
2SK3371 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Regulator Applications