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参数资料
| 型号： | 2SK3374 |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 450 V, 4.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-8M1B, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 182K |
| 代理商： | 2SK3374 |
2SK3374
2009-09-29
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Drain-source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cut-OFF current
IDSS
VDS = 450 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
450
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 0.5 A
3.7
4.6
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 0.5 A
0.3
0.7
S
Input capacitance
Ciss
180
Reverse transfer capacitance
Crss
2
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
20
pF
Rise time
tr
7
Turn-ON time
ton
15
Fall time
tf
30
Switching time
Turn-OFF time
toff
70
ns
Total gate charge
(gate-source plus gate-drain)
Qg
5
Gate-source charge
Qgs
3
Gate-drain (“miller”) charge
Qgd
VDD 360 V, VGS = 10 V, ID = 1 A
2
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
1
A
Pulse drain reverse current
(Note 1)
IDRP
2
A
Forward voltage (diode)
VDSF
IDR = 1 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
350
ns
Reverse recovery charge
Qrr
IDR = 1 A, VGS = 0 V,
dIDR/dt = 100 A/μs
1.3
nC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
K3374
Lot No.
Note 4
Part No. (or abbreviation code)
Duty <= 1%, tw = 10 μs
0 V
10 V
VGS
RL = 400 Ω
VDD 200 V
ID = 0.5 A
VOUT
10
Ω
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