参数资料
型号: 2SK3376MFV
元件分类: 小信号晶体管
英文描述: 0.24 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
文件页数: 1/6页
文件大小: 335K
代理商: 2SK3376MFV
2SK3376MFV
2006-11-20
1
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK3376MFV
For ECM
Application for Ultra-compact ECM
Absolute Maximum Ratings (Ta=25°C)
Characteristic
Symbol
Rating
Unit
Gate-Drain voltage
VGDO
-20
V
Gate Current
IG
10
mA
Drain power dissipation (Ta
= 25°C)
PD (Note)
150
mW
Junction Temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Mounted on FR4 board
IDSS CLASSIFICATION
A-Rank
80 to 200A
B-Rank
170 to 300A
C-Rank
270 to 480A
BK-Rank
150 to 350A
Marking
Equivalent Circuit
Unit: mm
JEDEC
-
JEITA
-
TOSHIBA
2-1L1C
Weight: 1.5mg (typ.)
VESM
1.Drain
2.Source
3.Gate
D
G
S
IDSS Classification Symbol
A :A-Rank
B :B-Rank , BK-Rank
Type Name
3
C :C-Rank
1.
0.
05
0.
32
±
0
.0
5
1
2
3
0.
4
0.
4
0.
22
±
0
.0
5
0.8±0.05
0.
0.
05
1.2±0.05
0.
0
.0
5
0.
13±
0
.0
5
0.5mm
0.45mm
0.4mm
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