参数资料
型号: 2SK3376TK
元件分类: 小信号晶体管
英文描述: N-CHANNEL, Si, SMALL SIGNAL, JFET
封装: LEAD FREE, 2-1R1A, TESM3, 3 PIN
文件页数: 1/6页
文件大小: 201K
代理商: 2SK3376TK
2SK3376TK
2006-03-03
1
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK3376TK
For ECM
Application for Ultra-compact ECM
Lead(Pb)-free
Absolute Maximum Ratings (Ta=25°C)
Characteristic
Symbol
Rating
Unit
Gate-Drain voltage
VGDO
-20
V
Gate Current
IG
10
mA
Drain power dissipation (Ta
= 25°C)
PD
100
mW
Junction Temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
IDSS CLASSIFICATION
A-Rank
80 to 200A
B-Rank
170 to 300A
C-Rank
270 to 480A
BK-Rank
150 to 350A
Marking
Equivalent Circuit
Unit: mm
0.395±
0.0
5
0.1±
0.0
5
0.80±0.05
0.32±
0.0
5
0.22±
0.0
5
0.9±
0.1
0.4
5
0.45
1.2±0.05
1
2
3
1.4±
0.0
5
JEDEC
-
JEITA
-
TOSHIBA
2-1R1A
Weight: 2.2mg (typ.)
TESM3
1.Drain
2.Source
3.Gate
D
G
S
IDSS Classification Symbol
A :A-Rank
B :B-Rank , BK-Rank
Type Name
3
C :C-Rank
相关PDF资料
PDF描述
2SK3376TK-BK 0.39 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK3376TK-A 0.24 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK3385 30000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
2SK3420 85 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3421(S) 85 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET
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