参数资料
型号: 2SK3378
元件分类: 小信号晶体管
英文描述: 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: CMPAK-3
文件页数: 4/7页
文件大小: 44K
代理商: 2SK3378
2SK3378
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
100
mA
Drain peak current
I
D(pulse)
Note1
400
mA
Body-drain diode reverse drain current
I
DR
100
mA
Channel dissipation
Pch
Note 2
300
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
V
I
D = 100 A, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±5
AV
GS = ±16 V, VDS = 0
Zero gate voltege drain
current
I
DSS
——1
AV
DS = 30 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.3
2.3
V
I
D = 10A, VDS = 5 V
Static drain to source on state R
DS(on)
2.7
3.5
I
D = 50 mA,VGS = 10 V
Note 3
resistance
R
DS(on)
4.7
7.0
I
D = 20 mA,VGS = 4 V
Note 3
Forward transfer admittance
|y
fs|
5585—mS
I
D = 50 mA, VDS =10 V
Note 3
Input capacitance
Ciss
1.6
pF
V
DS = 10 V
Output capacitance
Coss
7
pF
V
GS = 0
Reverse transfer capacitance Crss
0.5
pF
f = 1 MHz
Turn-on delay time
t
d(on)
100
ns
I
D = 50 mA, VGS = 10 V
Rise time
t
r
330
ns
R
L = 200
Turn-off delay time
t
d(off)
1150
ns
Fall time
t
f
940
ns
Note:
3. Pulse test
4. Marking is EN
See characteristics curves of 2SK3288
相关PDF资料
PDF描述
2SK3379(S) 85 A, 40 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3385 30000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
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