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参数资料
| 型号： | 2SK3378ENTR-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SC-70, CMPAK-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 144K |
| 代理商： | 2SK3378ENTR-E |
2SK3378
REJ03G1599-0200 Rev.2.00 Oct 23, 2007
Page 2 of 6
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
30
—
V
ID = 100
A, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±5
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
1
A
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.3
—
2.3
V
ID = 10
A, VDS = 5 V
RDS(on)
—
2.7
3.5
ID = 50 mA, VGS = 10 V
Note 3
Static drain to source on state
resistance
RDS(on)
—
4.7
7.0
ID = 20 mA, VGS = 4 V
Note 3
Forward transfer admittance
|yfs|
55
85
—
mS
ID = 50 mA, VDS =10 V
Note 3
Input capacitance
Ciss
—
3
—
pF
Output capacitance
Coss
—
8
—
pF
Reverse transfer capacitance
Crss
—
1
—
pF
VDS = 10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td(on)
—
100
—
ns
Rise time
tr
—
330
—
ns
Turn-off delay time
td(off)
—
1150
—
ns
Fall time
tf
—
940
—
ns
ID = 50 mA, VGS = 10 V
RL = 200
Notes: 3. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3380 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Switching |
| 2SK3385 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3385-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,30A,22m ohm,TO-251 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-251 |
| 2SK3385-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3385-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 30A 3-Pin(2+Tab) TO-252 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 30A 3-Pin(2+Tab) TO-252 Cut Tape |
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