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参数资料
| 型号： | 2SK3379(S) |
| 元件分类： | JFETs |
| 英文描述： | 85 A, 40 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LDPAK-3 |
| 文件页数： | 6/12页 |
| 文件大小： | 61K |
| 代理商： | 2SK3379(S) |
2SK3379(L), 2SK3379(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
40
——V
I
D = 10 mA, VGS = 0
Gate to Source leak current
I
GSS
——
±0.1
AV
GS = ±20 V, VDS = 0
Zero gate voltage drain current
I
DSS
——
10
AV
DS = 30 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
DS = 10 V, ID = 1 mA
Note4
Forward transfer admittance
|y
fs|55
90
—
S
I
D = 45 A, VDS = 10 V
Note4
Static drain to source on state
R
DS(on)
—
3.8
4.8
m
I
D = 45 A, VGS = 10 V
Note4
resistance
R
DS(on)
—
5.5
8.5
m
I
D = 45 A, VGS = 4 V
Note4
Input capacitance
Ciss
—
9500
—
pF
V
DS = 10 V
Output capacitance
Coss
—
1750
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
650
—
pF
f = 1 MHz
Total gate charge
Qg
—
180
—
nc
V
DD = 20 V
Gate to source charge
Qgs
—
32
—
nc
V
GS = 10 V
Gate to drain charge
Qgd
—
40
—
nc
I
D = 85 A
Turn-on delay time
td(on)
—
85
—
ns
V
GS = 10 V
Rise time
tr
—
340
—
ns
I
D = 45 A
Turn-off delay time
td(off)
—
750
—
ns
R
L = 0.22
Fall time
tf
—
450
—
ns
Body-drain diode forward
voltage
V
DF
—
1.1
—
V
I
F = 85 A, VGS = 0
Body-drain diode reverse
recovery time
trr
—
70
—
ns
I
F = 85 A, VGS = 0
diF/dt = 50 A/
s
Note:
4. Pulse test
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相关代理商/技术参数 |
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|---|---|
| 2SK3380 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Switching |
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| 2SK3385-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,30A,22m ohm,TO-251 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-251 |
| 2SK3385-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3385-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 30A 3-Pin(2+Tab) TO-252 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 30A 3-Pin(2+Tab) TO-252 Cut Tape |
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