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参数资料
| 型号： | 2SK3389 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-9F1B, SC-97, 4 PIN |
| 文件页数： | 6/7页 |
| 文件大小： | 201K |
| 代理商： | 2SK3389 |
2SK3389
2004-07-06
6
Channel temperature (initial) Tch (°C)
EAS – Tch
A
a
va
la
nc
he
en
er
gy
E
AS
(mJ
)
rth – tw
Pulse width tw (s)
N
or
m
aliz
ed
t
ra
n
sie
nt
t
he
rm
al
im
pe
da
nc
e
r th
(t)
/R
th
(c
h-
c)
Drain-source voltage VDS (V)
D
rain
cu
rre
nt
I D
(A)
Safe operating area
0.01
10
0.1
1
10
100
1 m
10 m
100 m
1
10
T
PDM
t
Duty
= t/T
Rth (ch-c) = 1.0°C/W
Duty
= 0.5
0.2
0.1
Single
0.05
0.02
0.01
1000
800
600
400
200
0
25
50
75
100
125
150
0.1
1
10
100
1000
1
10
100
*: Single nonrepetitive pulse
Tc
= 25°C
Curves must be derated
linearly with increase in
temperature
ID max (pulsed) *
100
s *
1 ms *
ID max
(continuous)
DC operation
Tc
= 25°C
VDSS max
Waveform
IAR
BVDSS
VDD
VDS
RG = 25
VDD = 25 V, L = 95 H
=
VDD
BVDSS
2
I
L
2
1
ΕAS
Test circuit
0 V
15 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3389(TE24L,Q) | 功能描述:MOSFET N-ch 30V 75A 0.004 ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK3389_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
| 2SK3390 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET UHF Power Amplifier |
| 2SK3391 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK3391_07 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
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