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参数资料
| 型号： | 2SK3390 |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | RP8P, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 78K |
| 代理商： | 2SK3390 |
2SK3390
Rev.0, Aug. 2001, page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
17
V
Gate to source voltage
V
GSS
±10
V
Drain current
I
D
1A
Drain peak current
I
D(pulse)
Note1
2.5
A
Channel dissipation
Pch
Note2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. PW
< 1sec, Tch < 150 °C
2. Value at Tc = 25°C
Electrical Characteristics
(Tc = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Zero gate voltage drain current
I
DSS
——
10
AV
DS = 13.7 V, VGS = 0
Gate to source leak current
I
GSS
——
±5
AV
GS = ±10V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
2.2
—
3.0
V
I
D = 1mA, VDS = 13.7V
Input capacitance
Ciss
—
27.5
—
pF
V
GS = 5V, VDS = 0, f = 1MHz
Output capacitance
Coss
—
10.5
—
pF
V
DS = 13.7V, VGS = 0, f = 1MHz
Output Power
Pout
6.31
—
W
V
DS = 13.7V, IDO = 0.25A
f = 836 MHz, Pin = 126 mW
Added Efficiency
ηadd
60
—
%
V
DS = 13.7V, IDO = 0.25A
f = 836 MHz, Pin = 126 mW
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3391 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK3391_07 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK3391JX | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
| 2SK3391JXTL | 功能描述:MOSFET N-CH 17V 300MA UPAK RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| 2SK3391JXTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET UHF Power Amplifier |
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