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参数资料
| 型号： | 2SK3391JX |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | UAPK-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 62K |
| 代理商： | 2SK3391JX |
Rev.2.00, Apr.14.2004, page 1 of 4
2SK3391
Silicon N-Channel MOS FET
UHF Power Amplifier
REJ03G0209-0200Z
(Previous ADE-208-847 (Z))
Rev.2.00
Apr.14.2004
Features
High power output, High gain, High efficiency
PG = 18 dB, Pout = 1.6 W,
ηadd = 58% min. (f = 836 MHz)
Compact package capable of surface mounting
Outline
UPAK
D
G
S
1
2,4
3
1. Gate
2. Source
3. Drain
4. Source
2
1
4
Note:
Marking is “JX“.
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
17
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
0.3
A
Drain peak current
ID(pulse)
Note1
0.75
A
Channel dissipation
Pch
Note2
5W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–45 to +150
°C
Notes: 1. PW
< 1sec, Tch < 150°C
2. Value at Tc = 25
°C
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相关代理商/技术参数 |
参数描述 |
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