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参数资料
| 型号： | 2SK3411TP-FA |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 9000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 2/4页 |
| 文件大小： | 52K |
| 代理商： | 2SK3411TP-FA |
2SK3411
No.7175-2/4
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
9A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
36
A
Allowable Power Dissipation
PD
1W
Tc=25
°C15
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0
10
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.0
2.4
V
Forward Transfer Admittance
yfs
VDS=10V, ID=4A
4.5
6.5
S
RDS(on)1
ID=4A, VGS=10V
94
122
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=4A, VGS=4V
125
175
m
Input Capacitance
Ciss
VDS=20V, f=1MHz
280
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
90
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
30
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
7
ns
Rise Time
tr
See specified Test Circuit.
10
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
26
ns
Fall Time
tf
See specified Test Circuit.
8
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=9A
10
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=9A
1.7
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=9A
2.1
nC
Diode Forward Voltage
VSD
IS=9A, VGS=0
0.95
1.2
V
Switching Time Test Circuit
PW=10
s
D.C.
≤1%
10V
0V
VIN
P.G
50
G
S
ID=4A
RL=7.5
VDD=30V
VOUT
VIN
D
2SK3411
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