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参数资料
| 型号： | 2SK3417(2-10S2B) |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10S2B, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 225K |
| 代理商： | 2SK3417(2-10S2B) |
2SK3417
2009-09-29
5
Pulse width tw (S)
rth tw
EAS – Tch
Channel temperature (initial) Tch (°C)
Normalized
trans
ient
thermal
impedance
r th
(
t)
/R
th
(
ch-a)
A
valan
che
ene
rgy
E
AS
(mJ)
15 V
Test circuit
Wave form
IAR
BVDSS
VDD
VDS
RG = 25 Ω
VDD = 90 V, L = 12.2 mH
=
VDD
BVDSS
2
I
L
2
1
ΕAS
0
25
40
80
120
200
160
50
75
100
125
150
Safe operating area
Drain-source voltage VDS (V)
Drain
curren
t
I D
(
A
)
DC operation
Tc
= 25°C
0.01
1
10
100
1000
0.03
0.1
0.3
1
3
30
100
μs *
1 ms *
ID max (pulsed) *
*
Single nonrepetitive pulse
Tc
= 25°C
Curves must be derated linearly
with increase in temperature.
10
ID max (continuous) *
VDSS max
0.001
1
0.1
10
μ
100
μ
10
1 m
10 m
100 m
1
10
Single pulse
0.2
0.1
0.05
0.02
0.01
T
PDM
t
Duty
= t/T
Rth (ch-c) = 3.57°C/W
Duty
= 0.5
0.01
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3417 | 5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3419 | 90 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3419 | 90 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3424-ZK | 48 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3424-AZ | 48 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3417-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3418 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:2SK3418 |
| 2SK3418-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 85A 3-Pin(3+Tab) TO-220AB 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 85A 3-Pin(3+Tab) TO-220AB Cut Tape |
| 2SK3419 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3419-E | 制造商:Renesas Electronics Corporation 功能描述: |
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