参数资料
型号: 2SK3419
元件分类: JFETs
英文描述: 90 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: TO-3P, 3 PIN
文件页数: 4/10页
文件大小: 48K
代理商: 2SK3419
2SK3419
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
——V
I
D = 10 mA, VGS = 0
Gate to source leak current
I
DSS
——
10
AV
DS = 60 V, VGS = 0
Zero Gate voltage drain drain
current
I
GSS
——
±0.1
AV
GS = ±20 V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
2.5
V
DS = 10 V, ID = 1 mA
Note 1
Forward transfer admittance
|y
fs|55
90
S
I
D = 45 A, VDS = 10 V
Note 1
Static drain to source on state
R
DS(on)
4.3
5.5
m
I
D = 45 A, VGS = 10 V
Note 1
resistance
R
DS(on)
6.0
9.0
m
I
D = 45 A, VGS = 4 V
Note 1
Input capacitance
Ciss
9770
pF
V
DS = 10 V
Output capacitance
Coss
1340
pF
V
GS = 0
Reverse transfer capacitance
Crss
470
pF
f = 1 MHz
Total gate charge
Qg
180
nc
V
DD = 50 V
Gate to source charge
Qgs
32
nc
V
GS = 10 V
Gate to drain charge
Qgd
36
nc
I
D = 90 A
Turn-on delay time
td(on)
53
ns
V
GS = 10 V
Rise time
tr
320
ns
I
D = 45 A
Turn-off delay time
td(off)
700
ns
R
L = 0.67
Fall time
tf
380
ns
Body-drain diode forward
voltage
V
DF
1.0
V
I
F = 90 A, VGS = 0
Body-drain diode reverse
recovery time
trr
75
ns
I
F = 90 A, VGS = 0
diF/dt = 50 A/
s
Note:
1. Pulse test
相关PDF资料
PDF描述
2SK3424-ZK 48 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3424-AZ 48 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3430-ZJ 80 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3430-Z-AZ 80 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3430-Z 80 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
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