- 您现在的位置：买卖IC网 > PDF目录33498 > 2SK3424-ZK 48 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB PDF资料下载
参数资料
| 型号： | 2SK3424-ZK |
| 元件分类： | JFETs |
| 英文描述： | 48 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封装： | MP-25ZK, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 67K |
| 代理商： | 2SK3424-ZK |
Data Sheet D14640EJ2V0DS
4
2SK3424
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
0
50
4
0
50
100
150
8
16
20
12
7.0 V
10 V
VGS = 4.5 V
ID = 24 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1
ISD
-
Diode
Forward
Current
-
A
0
1.5
VSD - Source to Drain Voltage - V
0.5
Pulsed
0.1
0.01
1
10
100
1000
0 V
4.5 V
VGS = 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
0.1
100
1000
10000
1
10
100
VGS = 0 V
f = 1 MHz
Coss
Crss
Ciss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
10
1
0.1
100
1000
10
100
tf
tr
td(on)
td(off)
VDD = 15 V
VGS = 10 V
RG = 10
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
ISD - Diode Forward Current - A
trr
-
Reverse
Recovery
Time
-
ns
di/dt = 100 A/ s
VGS = 0 V
1
0.1
10
1
10
100
1000
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-
Gate
to
Source
Voltage
-
V
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
0
10
20
30
40
10
5
15
20
25
30
4
0
8
VDD = 24 V
15 V
6 V
VDS
12
VGS
ID = 48 A
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3424-AZ | 48 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3430-ZJ | 80 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3430-Z-AZ | 80 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3430-Z | 80 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3431-Z | 83 A, 40 V, 0.0089 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3426 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:For Impedance Conversion In Low Frequency |
| 2SK34260TL | 功能描述:JFET N-CH 20V 2MA SSSMINI-3 RoHS:是 类别:分离式半导体产品 >> JFET（结点场效应 系列:- 标准包装:8,000 系列:- 电流 - 漏极(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏极至源极电压(Vdss):30V 漏极电流 (Id) - 最大:10mA FET 型:N 沟道 电压 - 击穿 (V(BR)GSS):- 电压 - 切断 (VGS 关）@ Id:180mV @ 1µA 输入电容 (Ciss) @ Vds:4pF @ 10V 电阻 - RDS（开）:200 欧姆 安装类型:表面贴装 包装:带卷 (TR) 封装/外壳:3-XFDFN 供应商设备封装:3-ECSP1006 功率 - 最大:100mW |
| 2SK3427 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon N-Channel Junction |
| 2SK3430 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3430-AZ | 制造商:Renesas Electronics 功能描述:Nch 40V 80A 7.3m@10V TO220AB Bulk 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 40V 80A 3-Pin(3+Tab) TO-220AB Cut Tape |
发布紧急采购，3分钟左右您将得到回复。