参数资料
型号: 2SK3441
厂商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
中文描述: 东芝场效应晶体管硅?频道马鞍山型(U型MOSII)
文件页数: 1/6页
文件大小: 233K
代理商: 2SK3441
2SK3441
2002-02-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS
II
)
2SK3441
DC-DC Converter
Relay Drive and Motor Drive Applications
Low drain-source ON resistance: R
DS (ON)
= 4.5 m
(typ.)
High forward transfer admittance: |Y
fs
| = 80 S (typ.)
Low leakage current: I
DSS
=
1
00 μA (max) (V
DS
= 60 V)
Enhancement-mode: V
th
=
1
.3 to 2.5 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
60
V
Drain-gate voltage (R
GS
20 k )
V
DGR
60
V
Gate-source voltage
V
GSS
20
V
DC
(Note 1)
I
D
75
Drain current
Pulse (t
1 ms)
(Note 1)
I
DP
300
A
Drain power dissipation (Tc 25°C)
P
D
125
W
Single pulse avalanche energy
(Note 2)
E
AS
468
mJ
Avalanche current
I
AR
75
A
Repetitive avalanche energy (Note 3)
E
AR
12.5
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
1.00
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: V
DD
25 V, T
ch
25°C (initial), L 113 H, R
G
25 ,
I
AR
75 A
Note 3:
Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
Notice:
Please use the S
1
pin for gate
input signal return. Make
sure that the main current
flows into S2 pin.
1
2
3
4
相关PDF资料
PDF描述
2SK3442 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
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