参数资料
型号: 2SK3466
厂商: Toshiba Corporation
英文描述: Chopper Regulator
中文描述: 斩波调压
文件页数: 1/7页
文件大小: 222K
代理商: 2SK3466
2SK3466
2002-02-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
-MOS
V
)
2SK3466
Chopper Regulator
Low drain-source ON resistance: R
DS (ON)
= 1.35
(typ.)
High forward transfer admittance: Y
fs
= 4.0 S (typ.)
Low leakage current: I
DSS
= 100 μA (max) (V
DS
= 500 V)
Enhancement-model: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
500
V
Drain-gate voltage (R
GS
20 k )
V
DGR
500
V
Gate-source voltage
V
GSS
30
V
DC
(Note 1)
I
D
5
Drain current
Pulse
(Note 1)
I
DP
20
A
Drain power dissipation (Tc 25°C)
P
D
50
W
Single pulse avalanche energy
(Note 2)
E
AS
180
mJ
Avalanche current
I
AR
5
A
Repetitive avalanche energy (Note 3)
E
AR
5
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
2.5
°C/W
Note 1: Please use devises on condition that the channel temperature
is below 150°C.
Note 2: V
DD
90 V, T
ch
25°C (initial), L 12.2 mH, R
G
25 ,
I
AR
5 A
Note 3:
Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
1
3
4
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