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参数资料
| 型号： | 2SK3469 |
| 厂商： | FUJI ELECTRIC HOLDINGS CO., LTD. |
| 英文描述： | N CHANNEL SILICON POWER MOSFET |
| 中文描述： | N通道功率MOSFET硅 |
| 文件页数： | 2/4页 |
| 文件大小： | 114K |
| 代理商： | 2SK3469 |
2
0
5
10
15
ID [A]
20
25
30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
R
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
7.0V
VGS=6.5V
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
I
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80μs Pulse test, VDS=25V,Tch=25°C
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
VDS [V]
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
20V
10V
8V
7.5V
7.0V
I
Typical Output Characteristics
ID=f(VDS):80μs Pulse test,Tch=25°C
VGS=6.5V
Characteristics
2SK3469-01MR
FUJI POWER MOSFET
gfs=f(ID):80μs Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80μs Pulse test, Tch=25°C
0.1
1
10
0.1
1
10
100
g
ID [A]
Typical Transconductance
0
25
50
75
100
125
150
0
10
20
30
40
50
60
Allowable Power Dissipation
PD=f(Tc)
P
Tc [
°
C]
0
25
50
75
100
125
150
0
50
100
150
200
250
300
starting Tch [
°
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=12A
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3469-01 | N CHANNEL SILICON POWER MOSFET |
| 2SK3469-01MR | N CHANNEL SILICON POWER MOSFET |
| 2SK3471 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV) |
| 2SK3472 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 2SK3475 | VHF-and UHF-band Amplifier Applications |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3469-01 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N CHANNEL SILICON POWER MOSFET |
| 2SK3469-01MR | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOSFET |
| 2SK3469-01MR_03 | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOSFET |
| 2SK3469-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3471 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications |
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