参数资料
型号: 2SK3471
厂商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
中文描述: 东芝场效应晶体管硅?频道马鞍山类型(喝醉MOSV)
文件页数: 2/3页
文件大小: 104K
代理商: 2SK3471
2SK3471
2002-09-04
2
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
25 V, V
DS
0 V
10
A
Drain-source breakdown voltage
V
(BR) GSS
I
G
10 A, V
DS
0 V
30
V
Drain cut-OFF current
I
DSS
V
DS
500 V, V
GS
0 V
100
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
10 mA, V
GS
0 V
500
V
Gate threshold voltage
V
th
V
DS
10 V, I
D
1 mA
2.0
4.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
10 V, I
D
0.25 A
10
18
Forward transfer admittance
Y
fs
V
DS
10 V, I
D
0.25 A
0.2
0.4
S
Input capacitance
C
iss
75
Reverse transfer capacitance
C
rss
7
Output capacitance
C
oss
V
DS
10 V, V
GS
0 V, f 1 MHz
24
pF
Rise time
t
r
11
Turn-ON time
t
on
18
Fall time
t
f
54
Switching time
Turn-OFF time
t
off
95
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
3.8
Gate-source charge
Q
gs
1.9
Gate-drain (“miller”) charge
Q
gd
V
DD
400 V, V
GS
10 V, I
D
0.5 A
1.9
nC
Source-Drain Ratings and Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
DR
0.5
A
Pulse drain reverse current
(Note 1)
I
DRP
1.5
A
Forward voltage (diode)
V
DSF
I
DR
0.5 A, V
GS
0 V
1.5
V
Reverse recovery time
t
rr
190
ns
Reverse recovery charge
Q
rr
I
DR
0.5 A, V
GS
0 V,
dI
DR
/dt 100 A/ s
380
nC
Duty
1%, t
w
10 s
0 V
10
V
V
GS
R
L
1 k
V
DD
250 V
I
D
0.25
A
V
OUT
4
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