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参数资料
| 型号： | 2SK3484-Z-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 16000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 封装： | TO-252, MP-3Z, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 144K |
| 代理商： | 2SK3484-Z-AZ |
Data Sheet D15069EJ2V0DS
3
2SK3484
TYPICAL CHARACTERISTICS (TA = 25°C)
TC - Case Temperature - C
P
T
-Total
Power
Dissipation
-
W
080
20
40
60
100
140
120
160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
040
20
60
100
140
80
120
160
120
100
80
60
40
20
PW - Pulse Width - s
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t)
-
Transient
Thermal
Resistance
-
C
/W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
Single Pulse
10
100
Rth(ch-C) = 4.17C/W
Rth(ch-A) = 125C/W
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
10
1
0.1
100
0.1
1
10
100
TC = 25C
Single Pulse
1000
10
ms
ID(pulse)
ID(DC)
1
ms
100
s
10
s
R
DS(on)
Limited
(at
V
GS
=
10
V)
P
ow
er
Dissipation
Limited
DC
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3484 | 16000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3484-AZ | 16000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3491TP-FA | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3491TP-FA | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3491 | 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3484-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3485 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3485-TD-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 20V 2.5A SOT89 |
| 2SK3486 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3486-TD-E | 制造商:SANYO 功能描述:Nch 20V 8A 43m@4V PCP(SC62) Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 20V 8A TO243 |
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