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参数资料
| 型号： | 2SK3501-01 |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | 12 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 106K |
| 代理商： | 2SK3501-01 |
1
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
600
Continuous drain current
ID
±12
Pulsed drain current
ID(puls]
±48
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR *2
12
Maximum Avalanche Energy
EAS*1
183
Maximum Drain-Source dV/dt
dVDS/dt *4
20
Peak Diode Recovery dV/dt
dV/dt *3
5
Max. power dissipation
PD
Ta=25°C
2.02
Tc=25°C
195
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3501-01
FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V
ID=5A
VGS=10V
ID=5A
VDS=25V
VCC=300V ID=5A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
S
pF
nC
A
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.641
62.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=250V
ID=10A
VGS=10V
L=2.33mH Tch=25°C
IF=10A VGS=0V Tch=25°C
IF=10A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
600
3.0
5.0
25
250
10
100
0.58
0.75
48
1200
1800
140
210
69
17
26
15
23
35
53
711
30
45
11
16.5
10
15
12
1.00
1.50
0.75
5.0
-55 to +150
Outline Drawings [mm]
TO-220AB
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 IF -ID, -di/dt=50A/s, Vcc BVDSS, Tch 150°C
=
<
=
<
=
<
*4 VDS 600V
<
=
*1 L=2.33mH, Vcc=60V, See to Avalanche Energy Graph
*2 Tch 150°C
=
<
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