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参数资料
| 型号： | 2SK3506 |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 2-16C1B, SC-65, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 135K |
| 代理商： | 2SK3506 |
2SK3506
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3506
Relay Drive and DC-DC Converter Applications
Motor Drive Applications
Low drain-source ON resistance: RDS (ON) = 16 m (typ.)
High forward transfer admittance: |Yfs| = 26 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 30 V)
Enhancement model: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 k)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
45
Drain current
Pulse (Note 1)
IDP
135
A
Drain power dissipation (Tc
= 25°C)
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
220
mJ
Avalanche current
IAR
45
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50
°C/W
Note 1:
Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 78 H, IAR = 45 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
相关PDF资料 |
PDF描述 |
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| 2SK3506 | 45 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3507-Z | 22000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252 |
| 2SK3507 | 22000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3511-S-AZ | 83 A, 75 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3511-AZ | 83 A, 75 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3510-AZ | 功能描述:MOSFET N-CH 75V MP-25/TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3511(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3511-AZ | 功能描述:MOSFET N-CH 75V MP-25/TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3512-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SK3513-01LSC | 制造商:Fuji Electric 功能描述: |
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