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参数资料
| 型号： | 2SK3506 |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-16C1B, SC-65, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 144K |
| 代理商： | 2SK3506 |
2SK3506
2009-09-29
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut-OFF current
IDSS
VDS = 30 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 25 A
16
20
m
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 25 A
13
26
S
Input capacitance
Ciss
1500
Reverse transfer capacitance
Crss
480
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
680
pF
Rise time
tr
11
Turn-ON time
ton
18
Fall time
tf
60
Switching time
Turn-OFF time
toff
130
ns
Total gate charge
(gate-source plus gate-drain)
Qg
39
Gate-source charge
Qgs
25
Gate-drain (“miller”) charge
Qgd
VDD 24 V, VGS = 10 V, ID = 45 A
14
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
45
A
Pulse drain reverse current
(Note 1)
IDRP
135
A
Forward voltage (diode)
VDSF
IDR = 45 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
100
ns
Reverse recovery charge
Qrr
IDR = 45 A, VGS = 0 V,
dIDR/dt = 50 A/μs
200
nC
Marking
Duty
≤ 1%, tw = 10 μs
0 V
10 V
VGS
RL = 1.2 Ω
VDD 30 V
ID = 25 A
VOUT
4.7
Ω
K3506
TOSHIBA
Lot No.
Note 4
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3507-Z | 22000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252 |
| 2SK3507 | 22000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 2SK3511-S-AZ | 83 A, 75 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3511-AZ | 83 A, 75 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3511-Z | 83 A, 75 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3510-AZ | 功能描述:MOSFET N-CH 75V MP-25/TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3511(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3511-AZ | 功能描述:MOSFET N-CH 75V MP-25/TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| 2SK3512-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SK3513-01LSC | 制造商:Fuji Electric 功能描述: |
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