参数资料
型号: 2SK3570-S
元件分类: JFETs
英文描述: 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
封装: FIN CUT, MP-25, 3 PIN
文件页数: 1/8页
文件大小: 82K
代理商: 2SK3570-S
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confirm that this is the latest version.
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availability and additional information.
2002
MOS FIELD EFFECT TRANSISTOR
2SK3570
SWITCHING
N-CHANNEL POWER MOS FET
Document No. D16256EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP (K)
Printed in Japan
DATA SHEET
The mark
!
! shows major revised points.
DESCRIPTION
The 2SK3570 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5V drive available.
Low on-state resistance,
RDS(on)1 = 12 m
MAX. (VGS = 10 V, ID = 24 A)
Low gate charge
QG = 23 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A)
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±48
A
Drain Current (pulse)
Note
ID(pulse)
±160
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
29
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note PW
≤ 10
s, Duty Cycle ≤ 1%
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3570
TO-220AB
2SK3570-S
TO-262
2SK3570-ZK
TO-263
2SK3570-Z
TO-220SMD
Note
Note TO-220SMD package is produced only in Japan.
5
相关PDF资料
PDF描述
2SK3570-S 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
2SK3571-ZK-AZ 48 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
2SK3571-S 48 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
2SK3571 48 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3572 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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