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参数资料
| 型号： | 2SK3570-S |
| 元件分类： | JFETs |
| 英文描述： | 48 A, 20 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
| 封装： | FIN CUT, MP-25, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 82K |
| 代理商： | 2SK3570-S |
Data Sheet D16256EJ2V0DS
3
2SK3570
TYPICAL CHARACTERISTICS (TA = 25
°°°°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT
-
P
e
rc
ent
age
o
fRa
ted
P
o
w
e
r-
%
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
TC - Case Temperature -
°C
P
T
-
Tot
a
l
P
o
w
e
rDi
s
ipat
ion
-
W
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
TC - Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
ID
-
Drai
n
Current
-
A
0.1
1
10
100
1000
0.1
1
10
100
ID(pulse)
TC = 25
°C
Single pulse
10 m s
Power dissipation
lim ited
ID(DC)
PW = 10
s
1 m s
DC
RDS(on) limited
100
s
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth
(t
)-
Trans
ie
n
tTher
m
a
lResi
st
anc
e
-
°C/W
0.01
0.1
1
10
100
Rth(ch-C) = 4.31
°C/W
Rth(ch-A) = 83.3
°C/W
Single pulse
PW - Pulse Width - s
10
100
1 m
10 m
100 m
1
10
100
1000
5
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3571-ZK-AZ | 48 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 2SK3571-S | 48 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
| 2SK3571 | 48 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3572 | 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3572-ZK-AZ | 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3570-ZK-E1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SK3572-ZK-E1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SK3576-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3576-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 4A 3-Pin Thin-Type Mini-Mold T/R |
| 2SK3576-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述: |
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