参数资料
型号: 2SK3571-S
元件分类: JFETs
英文描述: 48 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
封装: FIN CUT, MP-25, 3 PIN
文件页数: 7/8页
文件大小: 82K
代理商: 2SK3571-S
Data Sheet D16739EJ3V0DS
7
2SK3813
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
<R> 2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2
13
6.5 ±0.2
5.0 ±0.2
4
1.5
0.1
+0.2
5.5
±0.2
7.0
MIN.
13.7
MIN.
2.3
0.75
0.5 ±0.1
2.3 ±0.2
1.6
±0.2
1.1 ±0.2
0.5 0.1
+0.2
0.5 0.1
+0.2
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
相关PDF资料
PDF描述
2SK3571 48 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3572 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3572-ZK-AZ 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
2SK3572-S 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3573 83 A, 20 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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