参数资料
型号: 2SK3571
元件分类: JFETs
英文描述: 48 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: MP-25, 3 PIN
文件页数: 5/8页
文件大小: 82K
代理商: 2SK3571
Data Sheet D16739EJ3V0DS
5
2SK3813
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-
m
Ω
0
1
2
3
4
5
6
7
8
9
10
-75
-25
25
75
125
175
ID = 30 A
Pulsed
10 V
VGS = 4.5 V
Tch - Channel Temperature - °C
C
is
s,
C
os
s,
C
rss
-
Capacitance
-
pF
10
100
1000
10000
100000
0.01
0.1
1
10
100
Ciss
Coss
Crss
VGS = 0 V
f = 1 MHz
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
on)
,t
r,
t
d(
off)
,t
f-
Swi
tching
Time
-
ns
1
10
100
1000
0.1
1
10
100
tr
td(off )
td(on)
tf
VDD = 20 V
VGS = 10 V
RG = 0
Ω
ID - Drain Current - A
V
DS
-
D
rain
to
So
urce
Voltage
-
V
0
5
10
15
20
25
30
35
0
204060
80
100
0
2
4
6
8
10
12
14
VDS
VDD = 32 V
20 V
8 V
ID = 60 A
VGS
QG - Gate Charge - nC
V
GS
-
Gate
to
So
urce
Voltage
-
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F-
Diode
Fo
rwa
rd
Curren
t-
A
0.01
0.1
1
10
100
1000
00.5
11.5
VGS = 10 V
0 V
Pulsed
VF(S-D) - Source to Drain Voltage - V
t
rr-
Rev
e
rs
e
Rec
o
v
e
ry
Ti
me
-
ns
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
μs
VGS = 0 V
IF - Diode Forward Current - A
相关PDF资料
PDF描述
2SK3572 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3572-ZK-AZ 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
2SK3572-S 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3573 83 A, 20 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3573-ZK-AZ 83 A, 20 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
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