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参数资料
| 型号： | 2SK3572-S |
| 元件分类： | JFETs |
| 英文描述： | 80 A, 20 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | FIN CUT, MP-25, 3 PIN |
| 文件页数： | 5/10页 |
| 文件大小： | 209K |
| 代理商： | 2SK3572-S |
Data Sheet D16258EJ2V0DS
2
2SK3572
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 40 A
15
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 40 A
4.4
5.7
m
RDS(on)2
VGS = 4.5 V, ID = 40 A
7.4
9.9
m
Input Capacitance
Ciss
VDS = 10 V
1700
pF
Output Capacitance
Coss
VGS = 0 V
700
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
250
pF
Turn-on Delay Time
td(on)
VDD = 10 V, ID = 40 A
16
ns
Rise Time
tr
VGS = 10 V
14
ns
Turn-off Delay Time
td(off)
RG = 10
50
ns
Fall Time
tf
12
ns
Total Gate Charge
QG
VDD = 16 V
32
nC
Gate to Source Charge
QGS
VGS = 10 V
7.1
nC
Gate to Drain Charge
QGD
ID = 80 A
7.7
nC
Body Diode Forward Voltage
VF(S-D)
IF = 80 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 80 A, VGS = 0 V
42
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s34
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
τ
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3572-ZK-E1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SK3576-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3576-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 4A 3-Pin Thin-Type Mini-Mold T/R |
| 2SK3576-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3577-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 3.5A 3-Pin SC-59 |
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