参数资料
型号: 2SK3574-ZK
元件分类: JFETs
英文描述: 48 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
封装: MP-25ZK, 3 PIN
文件页数: 1/8页
文件大小: 86K
代理商: 2SK3574-ZK
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confirm that this is the latest version.
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MOS FIELD EFFECT TRANSISTOR
2SK3574
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16260EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP(K)
Printed in Japan
2002
The mark
!
! shows major revised points.
DESCRIPTION
The 2SK3574 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
FEATURES
4.5V drive available
Low on-state resistance
RDS(on)1 = 13.5 m
MAX. (VGS = 10 V, ID = 24 A)
Low gate charge
QG = 22 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 48 A)
Built-in gate protection diode
Avalanche capability ratings
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±48
A
Drain Current (pulse)
Note1
ID(pulse)
±140
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
29
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
19
A
Single Avalanche Energy
Note2
EAS
36
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25
, VGS = 20 → 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3574
TO-220AB
2SK3574-S
TO-262
2SK3574-ZK
TO-263
2SK3574-Z
TO-220SMD
Note
Note TO-220SMD package is produced only in Japan.
5
相关PDF资料
PDF描述
2SK3574-Z 48 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3574-ZK-AZ 48 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
2SK3575-S 83 A, 30 V, 0.0064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
2SK3575-ZK 83 A, 30 V, 0.0064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
2SK3575 83 A, 30 V, 0.0064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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