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参数资料
| 型号： | 2SK3575-ZK |
| 元件分类： | JFETs |
| 英文描述： | 83 A, 30 V, 0.0064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
| 封装： | MP-25ZK, 3 PIN |
| 文件页数： | 8/10页 |
| 文件大小： | 216K |
| 代理商： | 2SK3575-ZK |
Data Sheet D16261EJ2V0DS
5
2SK3575
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS
(o
n)
-
D
ra
in
t
o
S
o
u
rc
e
O
n
-s
ta
te
R
e
s
is
tanc
e
-
m
0
2
4
6
8
-50
0
50
100
150
ID = 42 A
Pulsed
VGS = 4.5 V
10 V
Tch - Channel Temperature - °C
C
is
s,
C
os
s,
C
rs
s-
Ca
pac
ita
n
c
e
-
p
F
10
100
1000
1000 0
0.1
1
10
100
V GS = 0 V
f = 1 M H z
C iss
C oss
C rss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
td(
o
n
),
t
r,
t
d
(o
ff)
,t
f-
S
w
itc
h
in
g
Tim
e
-n
s
1
10
100
1000
0.1
1
10
100
V DD = 10 V
V GS = 10 V
R G = 10
tr
tf
td(on)
td(off)
ID - Drain Current - A
V
DS
-
Drai
n
t
o
S
ourc
e
V
o
lt
age
-
V
0
5
10
15
20
25
30
0
20406080
0
2
4
6
8
10
12
ID = 83 A
VDD = 24 V
15 V
VDS
VGS
QG - Gate Change - nC
V
GS
-
Ga
te
t
o
S
our
c
e
V
o
lt
age
-
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
IF
-
D
io
de
Fo
rw
a
rd
C
u
rr
ent
-
A
0.01
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VGS = 10 V
0 V
pulsed
VF(S-D) - Source to Drain Voltage - V
trr
-
Rev
e
rs
e
Re
cov
e
ry
T
im
e
-n
s
1
10
100
1000
0.1
1
10
100
di/dt = 100 A /
s
VGS = 0 V
ID - Drain Current - A
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| 2SK3576 | 4000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3576-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3576-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 4A 3-Pin Thin-Type Mini-Mold T/R |
| 2SK3576-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3577-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 3.5A 3-Pin SC-59 |
| 2SK358 | 制造商:Toshiba 功能描述:Bulk |
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