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参数资料
| 型号： | 2SK3575 |
| 元件分类： | JFETs |
| 英文描述： | 83 A, 30 V, 0.0064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | MP-25, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 86K |
| 代理商： | 2SK3575 |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
20,000
10,000
1,000
100
10
200
100
10
1
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
600
.01
.1
1
10
50
0
20
40
60
80
100
120
0.3
0.5
0.7
0.9
1.1
1.3
1.5
84
10
1
16
12
8
4
0
APT6024HLL
050-7325
Rev
-
7-2002
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
Crss
Ciss
Coss
TJ =+150°C
TJ =+25°C
VDS=250V
VDS=100V
VDS=400V
I
D
= I
D
[Cont.]
10mS
1mS
100S
TC=+25°C
TJ =+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
TO-258 Package Outline
5.08 (.200) BSC
1.14 (.045)
0.88 (.035)
17.65 (.695)
17.39 (.685)
4.19 (.165)
3.94 (.155)
Drain
Source
Gate
1.65 (.065)
1.39 (.055)
Dia. Typ.
3 Leads
17.96 (.707)
17.70 (.697)
19.05 (0.750)
12.70 (0.500)
21.21 (.835)
20.70 (.815)
8.89 (.350)
8.63 (.340)
Dimensions in Millimeters and (Inches)
3.56 (.140) BSC
6.86 (.270)
6.09 (.240)
13.84 (.545)
13.58 (.535)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3576-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3576-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 4A 3-Pin Thin-Type Mini-Mold T/R |
| 2SK3576-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3577-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 3.5A 3-Pin SC-59 |
| 2SK358 | 制造商:Toshiba 功能描述:Bulk |
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