参数资料
型号: 2SK3582TK
元件分类: 小信号晶体管
英文描述: 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
封装: LEAD FREE, 2-1R1A, TESM3, 3 PIN
文件页数: 1/5页
文件大小: 187K
代理商: 2SK3582TK
2SK3582TK
2006-03-13
1
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK3582TK
For ECM
Application for Ultra-compact ECM
Lead(Pb)-free
Absolute Maximum Ratings (Ta=25°C)
Characteristic
Symbol
Rating
Unit
Gate-Drain voltage
VGDO
-20
V
Gate Current
IG
10
mA
Drain power dissipation (Ta
= 25°C)
PD
100
mW
Junction Temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
IDSS CLASSIFICATION
A-Rank
80 to 200 A
B-Rank
170 to 300A
Marking
Equivalent Circuit
Unit: mm
0.395±
0.0
5
0.1±
0.0
5
0.80±0.05
0.32±
0.0
5
0.22±
0.0
5
0.9±
0.1
0.4
5
0.45
1.2±0.05
1
2
3
1.4±
0.0
5
JEDEC
-
JEITA
-
TOSHIBA
2-1R1A
Weight: 2.2mg (typ.)
TESM3
1.Drain
2.Source
3.Gate
D
G
S
IDSS Classification Symbol
A :A-Rank
B :B-Rank
Type Name
5
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相关代理商/技术参数
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