参数资料
型号: 2SK3592-01S
厂商: FUJI ELECTRIC CO LTD
元件分类: JFETs
英文描述: 57 A, 150 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: TPACK-3
文件页数: 2/4页
文件大小: 253K
代理商: 2SK3592-01S
2
Characteristics
2SK3592-01L,S,SJ
FUJI POWER MOSFET
ID=f(VGS):80s Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80s Pulse test,Tch=25°C
gfs=f(ID):80s Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80s Pulse test, Tch=25°C
02
46
8
10
12
0
40
80
120
160
20V
7.0V
10V
8V
6.5V
7.5V
6.0V
ID
[A]
VDS [V]
Typical Output Characteristics
VGS=5.5V
0123456
789
10
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
0.1
1
10
100
0.1
1
10
100
gfs
[S]
ID [A]
Typical Transconductance
0
40
80
120
160
0.00
0.03
0.06
0.09
0.12
0.15
7.0V
6.5V
RDS(on)
[
]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
0
25
50
75
100
125
150
0
50
100
150
200
250
300
Allowable Power Dissipation
PD=f(Tc)
P
D
[W
]
Tc [
°C]
0
25
50
75
100
125
150
0
200
400
600
800
1000
I
AS
=23A
I
AS
=57A
I
AS
=35A
E
AS
[m
J]
starting Tch [
°C]
Maximum Avalanche Energy vs. starting Tch
E
AS
=f(starting Tch):Vcc=48V
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